Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

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KAWASAKI, Japan–(BUSINESS WIRE)–Sep. 25, 2024

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations and switching power supplies. Toshiba today started shipments of the ten new products in the series, five in a TO-247-2L package and five in a TO-247 package.

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Toshiba: 1200V third-generation SiC Schottky barrier diodes. (Graphic: Business Wire)

The new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure^[1] of Toshiba’s third-generation 650V SiC SBD. Use of a new metal in the junction barrier allows the new products to achieve industry-leading^[2] low forward voltage of 1.27V (typ.), low total capacitive charge and low reverse current. This significantly reduces equipment power loss in more higher power applications.

Toshiba will continue to expand its SiC power device lineup, and to focus on improving efficiency that reduces power loss in industrial power equipment.

Notes:

[1] Improved JBS Structure: A structure that incorporates the Merged PiN Schottky (MPS) structure, which reduces forward voltage at high currents, into the JBS structure, which lowers the electric field at the Schottky interface and reduces current leakage.

[2] Among 1200V SiC SBDs. As of September 2024, Toshiba survey.

Applications

Photovoltaic inverters
EV charging stations
Switching power supplies for industrial equipment, UPS

Features

Third-generation 1200 V SiC SBD
Industry-leading^[2] low forward voltage: V_F＝1.27V (typ.) (I_F=I_F(DC))
Low total capacitive charge: Q_C=109nC (typ.) (V_R=800V, f=1MHz) for TRS20H120H
Low reverse current: I_R＝2.0μA (typ.) (V_R=1200V) for TRS20H120H

Main Specifications
						(Unless otherwise specified, T_a =25°C)
Part number	Package	Absolute maximum ratings				Electrical characteristics			Sample Check & Availability
		Repetitive peak reverse voltage V_RRM (V)	Forward DC current I_F(DC) (A)		Non-repetitive peak forward surge current I_FSM (A)	Forward voltage (pulse measurement) V_F (V)	Reverse current (pulse measurement) I_R (μA)	Total capacitive charge Q_C (nC)
				Temperature conditions T_c (°C)	f=50Hz (half-sine wave, t=10ms), T_c=25°C	I_F=I_F(DC)	V_R=1200V	V_R=800V, f=1MHz
				Temperature conditions T_c (°C)	f=50Hz (half-sine wave, t=10ms), T_c=25°C	Typ.	Typ.	Typ.
TRS10H120H	TO-247-2L	1200	10	160	80	1.27	1.0	61	Buy Online
TRS15H120H			15	157	110		1.4	89	Buy Online
TRS20H120H			20	155	140		2.0	109	Buy Online
TRS30H120H			30	150	210		2.8	162	Buy Online
TRS40H120H			40	147	270		3.6	220	Buy Online
TRS10N120HB	TO-247		5 (Per leg) 10 (Both legs)	160	40 (Per leg) 80 (Both legs)	1.27 (Per leg)	0.5 (Per leg)	30 (Per leg)	Buy Online
TRS15N120HB			7.5 (Per leg) 15 (Both legs)	157	55 (Per leg) 110 (Both legs)		0.7 (Per leg)	43 (Per leg)	Buy Online
TRS20N120HB			10 (Per leg) 20 (Both legs)	155	70 (Per leg) 140 (Both legs)		1.0 (Per leg)	57 (Per leg)	Buy Online
TRS30N120HB			15 (Per leg) 30 (Both legs)	150	105 (Per leg) 210 (Both legs)		1.4 (Per leg)	80 (Per leg)	Buy Online
TRS40N120HB			20 (Per leg) 40 (Both legs)	147	135 (Per leg) 270 (Both legs)		1.8 (Per leg)	108 (Per leg)	Buy Online

Follow the links below for more on the new products.

TRS10H120H
TRS15H120H
TRS20H120H
TRS30H120H
TRS40H120H
TRS10N120HB
TRS15N120HB
TRS20N120HB
TRS30N120HB
TRS40N120HB

Follow the links below for more on Toshiba's SiC SBDs.
SiC Schottky Barrier Diodes
3rd generation SiC Schottky barrier diode (SBD)

Follow the link below for more on Toshiba’s SiC Power Devices.
SiC Power Devices

To check availability of the new products at online distributors, visit:
TRS10H120H
Buy Online

TRS15H120H
Buy Online

TRS20H120H
Buy Online

TRS30H120H
Buy Online

TRS40H120H
Buy Online

TRS10N120HB
Buy Online

TRS15N120HB
Buy Online

TRS20N120HB
Buy Online

TRS30N120HB
Buy Online

TRS40N120HB
Buy Online

* Company names, product names, and service names may be trademarks of their respective companies.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.

Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

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